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| 30V N-Channel Enhancement Mode MOSFET VDS=30V RDS(ON),Vgs@10V,Ids@45A=6mU RDS(ON),Vgs@4.5V,Ids@30A=10mU FEATURES Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Specially Designed for DC/DC Converters and Motor Drivers Fully Characterized Avalanche Voltage and Current TO-252(D-PAK) Top View G D S mi Gate Absolute Maximum Ratings (TA=25 Parameter Drain-Source Voltage Gate-Source Voltage Pulsed Drain Symbol VDS ID IDM PD TJ VGS na Drain INTERNAL SCHEMATIC DIAGRAM Unless Otherwise Noted) Limit 30 20 60 350 70 42 -55 to 150 300 1.8 40 mJ eli Current 1) Tstg EAS R R JC JA Continuous Drain Current TA=25 TA=100 Operating Junction Temperature Storage Temperature Range Maximum Power Dissipation Avalanche Energy with Single Pulse ID = 50A,VDD= 25V, L= 0.5mH Pr Jul,2005-Ver1.0 Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance (PCB mounted) 2) Note:1.Maximum DC current limited by the package 2 2.1-in 2oz Cu PCB board ry Source ME70N03 Pb Free Product Unit V A W /W 01 30V N-Channel Enhancement Mode MOSFET Electrical Characteristics (T J =25 Symbol STATIC BVDSS RDS(ON) VGS(th) IDSS IGSS Rg gfs Qg Qgs Qgd Td(on) tr Td(off) tf Ciss Coss Crss Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate Resistance Forward Transconductance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Unless Specified) Test Conditions VGS = 0V, ID=250 A VGS = 4.5V, ID=30A VGS = 10V, ID=30A Parameter na 7.5 4.5 1 1.6 1 26 6 5 17 3.5 40 6 2134 343 134 0.85 VDS = VGS, ID=250 A VDS = 25 V, VGS = 0V VGS = +20V, VDS = 0V VDS = 15V, ID =15A DYNAMIC mi VDD= 15V, RL = 15 RG = 6 ID = 1A, VGEN=10V VDS= 15V, VGS=0V f = 1.0 Mhz IS =20A, VGS = 0V VDS= 15V, ID= 25A, VGS=10V Reverse Transfer Capacitance VSD Diode Forward Voltage eli 300us,duty cycle 2% SOURCE-DRAIN DIODE IS Max.Diode Forward Current Note:pulse test:pulse width Pr 02 ry Min 25 ME70N03 Typ - Max - Unit V 9.0 6.0 3 1 +100 m V A nA S nC ns pF 20 1.2 A V 30V N-Channel Enhancement Mode MOSFET Physical Dimensions inches(millimeters) unless otherwise noted TO-252 E2 L na A1 L1 D D2 L2 b1 b mi SYMBOL A A1 C E E2 D D2 H L L1 L2 L3 b b1 P E P Pr MILLIMETE RS MIN MAX 2.250 2.350 0.950 1.050 0.490 0.530 6.400 6.600 5.300 5.450 6.000 6.200 7.100 7.300 9.700 10.10 0 0.600 Ref 1.425 1.625 0.650 0.850 0.020 0.120 0.770 0.850 0.840 0.940 2.290 BSC eli ry A C H L3 ME70N03 INCHES MIN 0.089 0.037 0.019 0.252 0.209 0.236 0.280 0.382 0.024 0.056 0.026 0.001 0.030 0.033 0.090 MAX 0.093 0.041 0.021 0.260 0.215 0.244 0.287 0.398 Ref 0.064 0.033 0.005 0.033 0.037 BSC 03 |
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